SUB 6-GHz components Lists
RFIC Solutions is a fables MMIC design service provider for GaAs, SiGi and CMOS fabrication process leads the known universe in providing solutions to any wireless communication system. These state-of-the-art components have high efficiency, good switching frequency and reduced system size respectively can deliver in a variety of applications.
Amplifiers
| Sr.No. | IP ID | Type | Process Technology | Freq (GHz) | Gain (dB) | OP1dB (dBm) | OIP3 (dBm) | Psat | NF (dB) | VDD (V) | ID (mA) | Application |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RJP01 | Power Amplifier | 180nm SiGe BiCMOS | 1.8 -2.0 | 28.5 | 28 | 35 | 5 | 3.5 | 280 | WCDMA Power amplifier | |
| 2 | RCL02 | Low Noise Amplifier | 180nm SiGe BiCMOS | 1.7 to 2.7 | 25.7-27.6 | 15 | 25 | 1.3 | 1.8 | 60 | IEEE 802.11 b/g WLAN, cellular systems, WiFi, ISM band applications | |
| 3 | RTLNA01 | Low Noise Amplifier | 180nm RFCMOS | 2 to 4 | 10.2-11.8 | 5 | 15 | 1.45 | 1.8 | 7.5 | IEEE 802.11 b/g WLAN, cellular systems, WiFi, ISM band applications | |
| 4 | RTDA01 | Driver Amplifier | 180nm RFCMOS | 2 to 5 | 13.5-17.5 | 18 | 25 | 5 | 3.3 | 192.4 | IEEE 802.11 b/g WLAN, cellular systems, WiFi, ISM band applications | |
| 5 | RJL02 | Low Noise Amplifier | 180nm SiGe BiCMOS | 1.5 to 2 | 13.7 | 16 | 26 | 0.7 | 3 | 15 | GPS Application | |
| 6 | RS03 | Low Noise Amplifier | 0.35µm SiGe BiCMOS | 2 to 6 | 9.2-12.6 | 9.5 | 19.5 | 1.5 | 3.3 | 11.8 | WLAN, PCS, Cellular and ISM band applications |
Variable Attenuators
| Sr.No. | IP ID | Type | Freq (GHz) | Insertion Loss (dB) | Attenuation Range (dB) | OP1dB (dBm) | OIP3 (dBm) | Interface | Bits | Application |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RFIPAT01 | Step Attenuator -0-15dB | 5 to 6 | 3 | 18 | 23 | 33 | Serial | 5 | Wifi, WLAN |
| 2 | RFIPAT02 | Step Attenuator -0-30dB | 5 to 6 | 7 | 37 | 21.3 | 31 | Serial | 6 | Wifi, WLAN |
| 3 | RFIPAT03 | Step Attenuator -0-18dB | 5 to 6 | 3 | 21 | 21.7 | 36 | Serial | 3 | Wifi, WLAN |
Mixers
SUB 6GHz-Mixers
| Part No | RF Freq (GHz) | IF Frequency (GHz) | Conversion Gain (dB) | DC Power Consumption (mW) | Noise Figure SSB (dB) | Supply Voltage (V) | Technology | Application |
|---|---|---|---|---|---|---|---|---|
| RM12 | 1.7-2.5 | 0.02-0.3 | 5 | 4@2.5GHz | 5 | 0.5um GaAs pHEMT | ||
| RCM01 | 1.5-3 | 0.02-0.5 | 8 | <30 | <8@2.5GHz | ±3.3 | 0.35µm SiGe BiCMOS | |
| RJM01 | 1.6-3 | 0.02-0.5 | 8 | <30 | 8@2.5GHz | ±3.3 | 0.35µm SiGe BiCMOS | |
| RM11 | 1-6 | 0.005-0.6 | 8 | 12@2.5GHz | 5 | 0.5um GaAs pHEMT |
Voltage Controlled Oscillators
| Sr.No. | IP ID | Type | Process Technology | Freq (GHz) | Vout (mV) | Phase Noise (dBc/Hz) | Frequency Pushing (MHz/V ) | Supply Voltage (V) | Tuning Voltage (V) | Application |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RJVC01 | Voltage Controlled Oscillator | 180nm CMOS | 0.5 to 1.15 | 717 | -90 | 700 | 1.2 | 0.8 to 1.5 | CDMA |
| 2 | RJVC02 | Voltage Controlled Oscillator | 180nm CMOS | 2 to 6 GHz | 11.48 | -80 | 170 | 1.8 | 0.55 to 1.25 | IEEE 802.11 b/g WLAN, cellular systems, WiFi, ISM band applications |
Ring Oscillators
| Sr.No. | IP ID | Type | Process/Technology | Freq (GHz) | Ring Oscillator Gain (MHz/V ) | Phase Noise (dBc/Hz) | Frequency Drift (MHz ) | Output Rise Time (pS) | Output Fall Time (pS) | Supply Voltage (V) | Application |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RG01 | Ring Oscillator | 180nm CMOS | 2.2 to 2.8 GHz. | 680 | -100 | <1 | 75 to 100 | 75 to 100 | 1.8 | PLL, Mobile Communication, Frequency Synthesizers |
Frequency Divider
| Sr.No. | IP ID | Type | Process/Technology | Freq (GHz) | Power Supply (V) | Maximum Power Dissipation (mW) | Maximum Frequency Allowed (GHz) | Division Ratio | Application |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RFPD01 | Frequency Divider | 180nm CMOS | 0.1 to 1 GHz | 1.8 | 1.8 | 1.5 | 16 to 127 | PLL, Mobile Communication, Frequency Synthesizers |
Low Dropout Voltage Regulator
| Sr.No. | IP ID | Type | Process/Technology | Drop out voltage (V) | Supply Voltage (V) | Output Voltage (V) | Output Current (mA) | Line regulation (mV) | Turn on settling time (msec) | Switching current (mA) | Quiescent Current (uA) | Application |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RJLDO03 | LDO | 180nm CMOS | 0.6 | 1.8 | 1.18 | 35 | 15 | 249 | 186 | 5 | ASIC clock generator, Clocking of A/D and D/A converters,Cellular Systems |
Low Power Voltage Reference
| Sr.No. | IP ID | Type | Process/Technology | Supply Voltage (V) | Output Voltage (V) | Output Current (uA) | Line regulation (mV) | Turn on settling time (msec) | Switching current (mA) | Quiescent Current (uA) | Application |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | RFVGR03 | Voltage references | 180nm CMOS | 1.8 | 1.22 | 50 | 13 | 15 | 1.46 | General Purpose,High-Speed Driver Chipset Power, Networking Back plane Cards, Network Interface Cards, PLL |
Phase Locked Loop
| Sr.No. | IP ID | Type | Process Technology | Fvco (MHz) | Kvco (MHz/V) | Vtune (mV) | Phase Noise (dBc/Hz) PFD | Frequency (MHz) | Application |
|---|---|---|---|---|---|---|---|---|---|
| 1 | RIBPL01 | Phase locked Loop | 180nm CMOS | 2000-2800 | 667 | 0.6-1.8 | Low | 40 | PLL, Frequency Synthesizers |
Phase Frequency Detector
| Sr.No. | IP ID | Type | Process/Technology | Frequency (MHz) | Power Supply (V) | Phase Noise (dBc/Hz) | Application |
|---|---|---|---|---|---|---|---|
| 1 | RIBFD01 | Phase Frequency Detector | 180nm CMOS | 40 | 1.8 | <-160@10 kHz offset | PLL, Frequency Synthesizers |